62712 tkim/41006pe msim tb-00002192/d2000 tsim ta-3075 no.6666-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 5lp01s p-channel small signal mosfet ? 50v, ? 0.07a, 23 , single smcp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? ultrahigh-speed switching ? 2.5v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --50 v gate-to-source voltage v gss 10 v drain current (dc) i d --0.07 a drain current (pulse) i dp pw 10 s, duty cycle 1% --0.28 a allowable power dissipation p d 0.15 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7027-004 ordering number : en6666b product & package information ? package : smcp ? jeita, jedec : sc-75, sot-416 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection xb lot no. lot no. 1 2 3 tl 3 1 2 1.6 1.6 0.75 0.8 0.4 0.4 0.5 0.5 0.6 0.2 0.3 0.1 0 to 0.1 0.1 min 1 : gate 2 : source 3 : drain smcp 5LP01S-TL-E
5lp01s no.6666-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = --1ma, v gs =0v --50 v zero-gate voltage drain current i dss v ds = --50v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds = --10v, i d = --100 a --0.4 --1.4 v forward transfer admittance | yfs | v ds = --10v, i d = --40ma 70 100 ms static drain-to-source on-state resistance r ds (on)1 i d = --40ma, v gs = --4v 18 23 r ds (on)2 i d = --20ma, v gs = --2.5v 20 28 r ds (on)3 i d = --5ma, v gs = --1.5v 30 60 input capacitance ciss v ds = --10v, f=1mhz 7.4 pf output capacitance coss 4.2 pf reverse transfer capacitance crss 1.3 pf turn-on delay time t d (on) see speci ed test circuit. 20 ns rise time t r 35 ns turn-off delay time t d (off) 160 ns fall time t f 150 ns total gate charge qg v ds = --10v, v gs = --10v, i d = --70ma 1.40 nc gate-to-source charge qgs 0.16 nc gate-to-drain ?miller? charge qgd 0.23 nc diode forward voltage v sd i s = --70ma, v gs =0v --0.85 --1.2 v switching time test circuit ordering information device package shipping memo 5LP01S-TL-E smcp 3,000pcs./reel pb free pw=10 s d.c . 1% 0v --4v v in p. g 50 g d i d = --40ma r l =625 v dd = --25v v out 5lp01s s v in
5lp01s no.6666-3/7 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.07 --0.06 --0.05 --0.04 --0.03 --0.02 --0.01 i d -- v ds v gs = --1.5v --2.0v --6.0v --4.0v --2.5v 0 0 --0.5 --1.0 --1.5 --2.0 --0.14 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02 --2.5 --3.0 --4.0 --3.5 i d -- v gs v ds = --10v 0 10 -- 1 15 -- 2 20 -- 3 25 30 -- 4 -- 5 35 -- 6 40 --7 --8 --9 --10 r ds (on) -- v gs ta=25 c 10 100 7 5 3 2 r ds (on) -- i d v gs = --4v it00090 it00092 it00091 it00093 ta= --25 c 75 c --3.0v --3.5v 25 c i d = --20ma --40ma gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- --0.01 --0.1 23 57 23 ta=75 c 25 c --25 c ta=75 c 25 c --25 c --0.01 --0.1 23 57 23 ta=75 c 25 c --25 c 0.01 0.1 1.0 7 5 3 2 7 5 3 2 | y fs | -- i d --60 10 --40 15 --20 20 0 25 30 20 35 40 60 40 80 100 120 140 160 r ds (on) -- ta it00096 it00097 i d = --20ma, v gs = --2.5v i d = --40ma, v gs = --4.0v 10 1000 100 7 5 3 2 7 5 3 2 r ds (on) -- i d v gs = --2.5v 10 100 7 5 3 2 r ds (on) -- i d v gs = --1.5v it00094 it00095 drain current, i d -- a forward transfer admittance, | yfs | -- s ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- --0.001 --0.01 23 57 23 --0.01 --0.1 23 57 23 ta= --25 c 75 c 25 c v ds = --10v
5lp01s no.6666-4/7 0 0 -- 1 -- 2 0.2 -- 3 -- 4 -- 5 -- 6 -- 7 0.6 0.4 -- 8 -- 9 1.0 0.8 --10 1.4 1.2 1.6 v gs -- qg sw time -- i d v ds = --10v i d = --70ma --0.01 10 --0.1 23 57 100 7 5 3 2 7 5 3 2 1000 v dd = --25v v gs = --4v 0 0.1 1.0 --10 -- 5 10 7 5 3 2 7 5 3 2 7 5 3 2 --20 --15 --30 --25 100 --40 --35 --50 --45 ciss, coss, crss -- v ds ciss, coss, crss -- pf f=1mhz --0.5 --0.8 --0.9 --1.0 --1.1 --0.6 --0.7 --1.2 i s -- v sd it00098 it00100 it00101 it00099 ciss coss crss t d (on) t d (off) t r t f diode forward voltage, v sd -- v source current, i s -- a drain current, i d -- a switching time, sw time -- ns gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v total gate charge, qg -- nc --0.01 --0.1 3 2 7 5 3 2 ta=75 c 25 c --25 c v gs =0v 0 0 0.05 20 40 60 80 0.10 0.15 100 0.20 120 140 160 p d -- ta it02381 ambient temperature, ta -- c allowable power dissipation, p d -- w
5lp01s no.6666-5/7 embossed taping speci cation 5LP01S-TL-E
5lp01s no.6666-6/7 outline drawing land pattern example 5LP01S-TL-E mass (g) unit 0.003 * for reference mm unit: mm 0.5 0.5 0.7 1.3 0.7 0.7 0.6
5lp01s ps no.6666-7/7 note on usage : since the 5lp01s is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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